Description

BD139 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.

Features:-

Highlights

Detailed Specifications: -

• Collector-emitter voltage: 80V
• Collector-base voltage: 80V
• Emitter-base voltage: 5V
• Continuous collector current: 1.5A
< li>Continuous Base current: 0.5A
• Maximum DC current gain (hFE): 40-250
• Total power dissipation: 12.5W
• Storage and operating temperature range: -55℃ to +150℃
< li> Thermal Resistance (ΘJA): 100°C/W < li> Thermal Resistance (ΘJC): 10°C/W

* Product Images are shown for illustrative purposes only and may differ from actual product.